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preliminary: the specification of this device are subject to change without notice. please contact your nearest hitachis sales dept. regarding specification. hm62v16514i series wide temperature range version 8 m sram (512-kword 16-bit) ade-203-1280a (z) preliminary rev. 0.1 aug. 9, 2001 description the hitachi hm62v16514i series is 8-mbit static ram organized 524,288-word 16-bit. hm62v16514i series has realized higher density, higher performance and low power consumption by employing hi-cmos process technology. it offers low power standby power dissipation; therefore, it is suitable for battery backup systems. it is packaged in standard 44-pin plastic tsopii. features ? single 3.0 v supply: 2.7 v to 3.6 v ? fast access time: 55/70 ns (max) ? power dissipation: ? active: 6.0 mw/mhz (typ) ? standby: 4.5 w (typ) ? completely static memory. ? no clock or timing strobe required ? equal access and cycle times ? common data input and output. ? three state output ? battery backup operation. ? temperature range: C40 to +85 c
hm62v16514i series 2 ordering information type no. access time package hm62v16514ltti-5 hm62v16514ltti-7 55 ns 70 ns 400-mil 44-pin plastic tsopii (normal-bend type) (ttp-44de) hm62v16514ltti-5sl hm62v16514ltti-7sl 55 ns 70 ns
hm62v162514i series 3 pin arrangement 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 a4 a3 a2 a1 a0 cs i/o0 i/o1 i/o2 i/o3 v v i/o4 i/o5 i/o6 i/o7 we a18 a17 a16 a15 a14 cc ss a5 a6 a7 oe ub lb i/o15 i/o14 i/o13 i/o12 v v i/o11 i/o10 i/o9 i/o8 a8 a9 a10 a11 a12 a13 cc ss (top view) 44-pin tsop pin description pin name function a0 to a18 address input i/o0 to i/o15 data input/output cs chip select we write enable oe output enable lb lower byte select ub upper byte select v cc power supply v ss ground
hm62v16514i series 4 block diagram i/o0 i/o15 we oe v v cc ss row decoder memory matrix 2,048 x 2,048 column i/o column decoder input data control control logic cs lb ub lsb msb lsb msb a5 a6 a7 a4 a3 a8 a9 a10 a11 a12 a13 a15 a16 a17 a0 a2 a14 a1 a18
hm62v162514i series 5 operation table cs we oe ub lb i/o0 to i/o7 i/o8 to i/o15 operation h high-z high-z standby h h high-z high-z standby l h l l l dout dout read l h l h l dout high-z lower byte read l h l l h high-z dout upper byte read ll l l din din write ll h l din high-z lower byte write ll l h high-z din upper byte write lhh high-z high-z output disable note: h: v ih , l: v il , : v ih or v il absolute maximum ratings parameter symbol value unit power supply voltage relative to v ss v cc C0.5 to + 4.6 v terminal voltage on any pin relative to v ss v t C0.5* 1 to v cc + 0.3* 2 v power dissipation p t 1.0 w storage temperature range tstg C55 to +125 c storage temperature range under bias tbias C40 to +85 c notes: 1. v t min: C3.0 v for pulse half-width 30 ns. 2. maximum voltage is +4.6 v. dc operating conditions parameter symbol min typ max unit note supply voltage v cc 2.7 3.0 3.6 v v ss 000v input high voltage v ih 2.2 v cc + 0.3 v input low voltage v il C0.3 0.6 v 1 ambient temperature range ta C40 85 c note: 1. v il min: C3.0 v for pulse half-width 30 ns.
hm62v16514i series 6 dc characteristics parameter symbol min typ * 1 max unit test conditions input leakage current |i li | 1 a vin = v ss to v cc output leakage current |i lo | 1 a cs = v ih or oe = v ih or we = v il or, l b = ub =v ih , v i/o = v ss to v cc operating current i cc 20ma cs = v il , others = v ih /v il , i i/o = 0 ma average operating current hm62v16514iC5 i cc1 16 30 ma min. cycle, duty = 100%, i i/o = 0 ma, cs = v il , others = v ih /v il hm62v16514iC7 i cc1 1425ma i cc2 2 5 ma cycle time = 1 s, duty = 100%, i i/o = 0 ma, cs 0.2 v, v ih 3 v cc C 0.2 v, v il 0.2 v standby current i sb 0.1 0.3 ma cs = v ih standby current i sb1 * 2 1.5 25 a 0 v vin (1) cs 3 v cc C 0.2 v or (2) lb = ub 3 v cc C 0.2 v, cs 0.2 v i sb1 * 3 1.5 10 a output high voltage v oh 2.2 v i oh = C1 ma output low voltage v ol 0.4 v i ol = 2 ma notes: 1. typical values are at v cc = 3.0 v, ta = +25 c and not guaranteed. 2. this characteristic is guaranteed only for l version. 3. this characteristic is guaranteed only for l-sl version. capacitance (ta = +25 c, f = 1.0 mhz) parameter symbol min typ max unit test conditions note input capacitance cin 8 pf vin = 0 v 1 input/output capacitance c i/o 10 pf v i/o = 0 v 1 note: 1. this parameter is sampled and not 100% tested.
hm62v162514i series 7 ac characteristics (ta = C40 to +85 c, v cc = 2.7 v to 3.6 v, unless otherwise noted.) test conditions ? input pulse levels: v il = 0.4 v, v ih = 2.2 v ? input rise and fall time: 5 ns ? input and output timing reference levels: 1.5 v ? output load: see figures (including scope and jig) dout 30pf r1 v tm v tm = 2.8 v r2 r1 = 3070 w r2 = 3150 w
hm62v16514i series 8 read cycle hm62v16514i -5 -7 parameter symbol min max min max unit notes read cycle time t rc 55 70 ns address access time t aa 55 70 ns chip select access time t acs 55 70 ns output enable to output valid t oe 35 40 ns output hold from address change t oh 10 10 ns lb , ub access time t ba 55 70 ns chip select to output in low-z t clz 10 10 ns 2, 3 lb , ub enable to low-z t blz 5 5 ns 2, 3 output enable to output in low-z t olz 5 5 ns 2, 3 chip deselect to output in high-z t chz 0 20 0 25 ns 1, 2, 3 lb , ub disable to high-z t bhz 0 20 0 25 ns 1, 2, 3 output disable to output in high-z t ohz 0 20 0 25 ns 1, 2, 3
hm62v162514i series 9 write cycle hm62v16514i -5 -7 parameter symbol min max min max unit notes write cycle time t wc 55 70 ns address valid to end of write t aw 50 60 ns chip selection to end of write t cw 50 60 ns 5 write pulse width t wp 40 50 ns 4 lb , ub valid to end of write t bw 50 55 ns address setup time t as 00ns 6 write recovery time t wr 00ns 7 data to write time overlap t dw 25 30 ns data hold from write time t dh 00ns output active from end of write t ow 55ns 2 output disable to output in high-z t ohz 0 20 0 25 ns 1, 2 write to output in high-z t whz 0 20 0 25 ns 1, 2 notes: 1. t chz , t ohz , t whz and t bhz are defined as the time at which the outputs achieve the open circuit conditions and are not referred to output voltage levels. 2. this parameter is sampled and not 100% tested. 3. at any given temperature and voltage condition, t hz max is less than t lz min both for a given device and from device to device. 4. a write occures during the overlap of a low cs , a low we and a low lb or a low ub . a write begins at the latest transition among cs going low, we going low and lb going low or ub going low. a write ends at the earliest transition among cs going high, we going high and lb going high or ub going high. t wp is measured from the beginning of write to the end of write. 5. t cw is measured from the later of cs going low to the end of write. 6. t as is measured from the address valid to the beginning of write. 7. t wr is measured from the earliest of cs or we going high to the end of write cycle.
hm62v16514i series 10 timing waveform read cycle t aa t acs t clz t blz t ba t oh t rc valid data address dout valid address high impedance cs lb , ub oe * 1, 2, 3 * 1, 2, 3 * 2, 3 * 2, 3 * 1, 2, 3 t olz * 2, 3 t oe t chz t bhz t ohz
hm62v162514i series 11 write cycle (1) ( we clock) address we t wc t aw t wp * 4 t wr * 7 t cw * 5 t bw t as * 6 t ow * 2 t whz * 1, 2 t dw t dh valid address valid data cs lb , ub dout din high impedance
hm62v16514i series 12 write cycle (2) ( cs clock, oe = v ih ) address we t wc t aw t wp * 4 t wr * 7 t cw * 5 t bw t as * 6 t dw t dh valid address valid data lb , ub dout din high impedance cs
hm62v162514i series 13 write cycle (3) ( lb , ub clock, oe = v ih ) address we t wc t aw t wp * 4 t cw * 5 t bw t wr * 7 t dw t dh valid address valid data lb , ub dout din high impedance cs t as * 6
hm62v16514i series 14 low v cc data retention characteristics (ta = C40 to +85 c) parameter symbol min typ * 4 max unit test conditions * 3 v cc for data retention v dr 2.0 3.6 v vin 3 0v (1) cs 3 v cc C 0.2 v or (2) lb = ub 3 v cc C 0.2 v cs 0.2 v data retention current i ccdr * 1 1.5 25 a v cc = 3.0 v, vin 3 0v (1) cs 3 v cc C 0.2 v or (2) lb = ub 3 v cc C 0.2 v cs 0.2 v i ccdr * 2 1.5 10 a chip deselect to data retention time t cdr 0 ns see retention waveform operation recovery time t r t rc * 5 ns notes: 1. this characteristic is guaranteed only for l version. 2. this characteristic is guaranteed only for l-sl version. 3. cs controls address buffer, we buffer, oe buffer, lb , ub buffer and din buffer. if cs controls data retention mode, vin levels (address, we , oe , lb , ub , i/o) can be in the high impedance state. if lb , ub controls data retention mode, lb , ub must be lb = ub 3 v cc C 0.2 v, cs must be cs 0.2 v. the other input levels (address, we , oe , i/o) can be in the high impedance state. 4. typical values are at v cc = 3.0 v, ta = +25?c and not guaranteed. 5. t rc = read cycle time.
hm62v162514i series 15 low v cc data retention timing waveform (1) ( cs controlled) cc v 2.2 v 2.7 v 0 v cs t cdr t r cs v ?0.2 v cc 3 dr v data retention mode low v cc data retention timing waveform (2) ( lb , ub controlled) cc v 2.2 v 2.7 v 0 v lb , ub t cdr t r lb , ub v ?0.2 v cc 3 dr v data retention mode
hm62v16514i series 16 package dimensions hm62v16514ltti series (ttp-44de) hitachi code jedec eiaj mass (reference value) ttp-44de 0.43 g *dimension including the plating thickness base material dimension 0.13 m 0.10 0.80 44 23 122 18.41 18.81 max *0.27 0.07 1.20 max 10.16 0.13 0.05 11.76 0.20 0 ?5 *0.145 0.05 1.005 max 0.50 0.10 0.68 0.80 0.25 0.05 0.125 0.04 as of january, 2001 unit: mm
hm62v162514i series 17 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen postfach 201,d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 5.0

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